Troubleshooting techniques (part 2)

October 12, 2017

(…continued) From the generalist to the specialist (Remember from part one that my mechanic had figured out nothing that I hadn’t already  figured out and had sent me to a automotive electric specialist. ) On one hand I was elated that I was as smart as the guys in the shop on the other hand [...]

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LM2524D/LM3524D

November 16, 2011

Regulating Pulse Width Modulator The LM3524D family is an improved version of the industry standard LM3524. It has improved specifications and additional features yet is pin for pin compatible with existing 3524 families. New features reduce the need for additional external circuitry often required in the original version. The LM3524D has a ±1% precision 5V [...]

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OPT301

October 25, 2011

Integrated Photodiode and Amplifier The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The transimpedance amplifier consists of a precision FET input op amp and an on-chip metal film resistor. The 0.09 x 0.09 inch photodiode is operated at zero bias for excellent linearity and [...]

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Capacitor Testing with a Multimeter

October 18, 2011

Let me begin this rant by letting you know that you CANNOT, unequivocally, test a capacitor and know that it is good with just a multimeter. If anyone tells you that you can, they’re full of baloney. I’d say something else, but I’m trying to keep this post “G” rated. You can tell if it [...]

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OPT101

October 13, 2011

Photodiode and Single-Supply Transimpedance Amplifier The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation, making it ideal for battery operated equipment. The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered [...]

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TPC8107

August 13, 2008

Field Effect Transistor Silicon P Channel This enhancement mode, p-channel, Field Effect Transistor (FET) has a low on-resistance (Rds=5.5mΩ).  It has a low leakage current Idss of 10µA (max) for Vds of 30V.  With it’s small physical footprint, it is well suited for use in Lithium Ion (LiOn) battery pack applications, notebook computers and portable [...]

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2SK3523

July 31, 2008

N-Channel Power MOSFET With a low on-resistance (Rds = 0.20Ω typical) this device is suitable for use in high power, high speed, switching applications like Uninterruptible Power Supplies (UPS), switching regulators and DC to DC converters.  It also features: No Secondary breakdown Low driving power Avalanche-proof Datasheet

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IRFZ44

July 31, 2008

N-channel Power MOSFET Vdss = 60v Rds(on)=0.023Ω Id=48A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable [...]

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2N2907 / 2N2907A

July 31, 2008

General Purpose PNP Transistor The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in JEDEC TO-39 (for 2N2905A) and in JEDEC TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. Datasheet

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